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| 1. product profile 1.1 general description 200 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2110 mhz to 2170 mhz. [1] 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; 5 mhz carrier spacing. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation ? decoupling leads to enable improved video bandwidth (80 mhz typical) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and mu lti carrier applications in the 2110 mhz to 2170 mhz frequency range BLF8G22LS-200V; blf8g22ls-200gv power ldmos transistor rev. 2 ? 10 december 2012 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab pr oduction test circuit, tested on straight lead device. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 2000 28 55 19.0 29 ? 30 [1]
BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 2 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol BLF8G22LS-200V (sot1244b) 1drain 2gate 3source [1] 4 video lead 5 video lead 6n . c . 7n . c . blf8g22ls-200gv (sot1244c) 1d r a i n 2g a t e 3s o u r c e [1] 4 video lead 5 video lead 6n . c . 7n . c . table 3. ordering information type number package name description version BLF8G22LS-200V - earless flanged ceramic package; 6 leads sot1244b blf8g22ls-200gv - earless flanged ceramic package; 6 leads sot1244c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 225 ?c BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 3 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF8G22LS-200V and blf8g22ls-200gv are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 2000 ma; p l = 200 w (cw); f = 2110 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 45 w 0.26 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 3.3 ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 330 ma 1.5 1.8 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v - 62.4 - a i gss gate leakage current v gs =11 v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d =330ma - 2.85 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 11.55 a -0.05- ? table 7. rf characteristics test signal: 2-carrier w-cdma; par = 8.4 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1-64 dpch; f 1 =2112.5mhz; f 2 =2117.5mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds =28v; i dq = 2000 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit, tested on straight lead device. symbol parameter conditions min typ max unit g p power gain p l(av) = 55 w 17.8 19.0 - db rl in input return loss p l(av) =55w - ? 13 ? 7db ? d drain efficiency p l(av) = 55 w 26 29 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) =55w - ? 30 ? 26 dbc BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 4 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 7.2 impedance information table 8. typical impedance information i dq = 2000 ma; main transistor v ds =28v. z s and z l defined in figure 1 . f z s z l (mhz) (? ) ( ? ) BLF8G22LS-200V 2110 0.84 ? j4.17 2.07 ? j2.39 2140 0.95 ? j4.43 2.23 ? j2.41 2170 1.12 ? j5.68 2.53 ? j2.40 blf8g22ls-200gv 2110 0.77 ? j6.22 2.00 ? j4.20 2140 0.80 ? j6.34 2.33 ? j4.00 2170 1.00 ? j6.61 2.55 ? j4.00 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 5 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 7.3 test circuit printed-circuit board (pcb): rogers ro4350; ? r = 3.5; thickness = 0.76 mm, copper plating = 35 ? m. see table 9 for list of components. fig 2. component layout for test circuit table 9. list of components for test circuit, see figure 2 . component description value remarks c1, c4, c7, c11, c14 multilayer ceramic chip capacitor 8.2 pf atc100b; vertically mounted c2 multilayer ceramic chip capacitor 1 ? f murata c3, c5, c16 multilayer cerami c chip capacitor 100 nf murata c8, c13 multilayer ceramic chip capacitor 220 nf, 50 v murata c6, c9, c12, c15 multilayer ceramic chip capacitor 4.7 ? f, 50 v murata c10 electrolytic capacitor >470 ? f, 50 v low esr r1 resistor 2.2 ? smd 0805; tolerance = 1 % r2, r3 resistor 0 ? smd 0805 BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 6 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 7.4 graphs 7.4.1 pulsed cw v ds = 28 v; i dq = 2000 ma; t p = 100 ? s; ? = 10 %. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz v ds = 28 v; i dq = 2000 ma; t p = 100 ? s; ? = 10 %. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 3. power gain as a function of output power; typical values fig 4. drain efficiency as a function of output power; typical values BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 7 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 7.4.2 is-95 v ds = 28 v; i dq = 2000 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz v ds = 28 v; i dq = 2000 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 5. power gain as a function of average output power; typical values fig 6. drain efficiency as a function of average output power; typical values v ds = 28 v; i dq = 2000 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz v ds = 28 v; i dq = 2000 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 7. adjacent channel power ratio (885 khz) as a function of average output power; typical values fig 8. adjacent channel power ratio (1980 khz) as a function of average output power; typical values BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 8 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 7.4.3 1-carrier w-cdma v ds = 28 v; i dq = 2000 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz v ds = 28 v; i dq = 2000 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 9. peak-to-average power ratio as a function of average output power; typical values fig 10. peak output power as a function of average output power; typical values ! ! ! v ds = 28 v; i dq = 2000 ma. (1) f = 2112.5 mhz (2) f = 2140 mhz (3) f = 2167.5 mhz v ds = 28 v; i dq = 2000 ma. (1) f = 2112.5 mhz (2) f = 2140 mhz (3) f = 2167.5 mhz fig 11. power gain as a function of average output power; typical values fig 12. drain efficiency as a function of average output power; typical values BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 9 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 7.4.4 2-carrier w-cdma v ds = 28 v; i dq = 2000 ma. (1) f = 2112.5 mhz (2) f = 2140 mhz (3) f = 2167.5 mhz v ds = 28 v; i dq = 2000 ma. (1) f = 2112.5 mhz (2) f = 2140 mhz (3) f = 2167.5 mhz fig 13. peak-to-average power ratio as a function of average output power; typical values fig 14. input return loss as a function of average output power; typical values "# "# "# v ds = 28 v; i dq = 2000 ma; 5 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz v ds = 28 v; i dq = 2000 ma; 5 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz fig 15. power gain as a function of average output power; typical values fig 16. drain efficiency as a function of average output power; typical values BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 10 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 7.4.5 2-tone vbw v ds = 28 v; i dq = 2000 ma; 5 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz v ds = 28 v; i dq = 2000 ma; 5 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz fig 17. adjacent channel power ratio (5 mhz) as a function of average output power; typical values fig 18. adjacent channel power ratio (10 mhz) as a function of average output power; typical values ! ! ! ! ! ! v ds = 28 v; i dq = 2000 ma; f = 2140 mhz. (1) imd low (2) imd high fig 19. vbw capability in class-ab test circuit $%%"&% '$ "#( !)* +! +! +! +! +! +! +! +! +! +! +! +! BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 11 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 8. package outline fig 20. package outline sot1244b &,&%&# &' -./0"#& 1&%'"2# 3.%2&$# %24& /"2# +''.& $/& +3 533 53+6 7-6 8#"/ $9 #2 "# : : : : : : : : : : : : : : " &#'"2#' ; &3 < : : ) : : 8 : : 8 1= > "# ?&' $9 #2 "# : : : : : : ; ; : : : : : : : : : : 3 : : : : : : : : : : : : @ : : : : : : : : : : : : a2/& : !"00" &/&% " &#'"2#' $%& &%"1& ,%2 /?& 2%"("#$0 "# ? " &#'"2#': : " &#'"2# "' &$'.%& : "# ? : ,%2 ;2=: < 8 8 ) ; & 3 @ 3 ' $0& = 1 > BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 12 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor fig 21. package outline sot1244c &,&%&# &' -./0"#& 1&%'"2# 3.%2&$# %24& /"2# +''.& $/& +3 533 53+6 7-6 a2/& : !"00" &/&% " &#'"2#' $%& &%"1& ,%2 /?& 2%"("#$0 "# ? " &#'"2#': &/$"0 b = b 1 8#"/ $9 #2 "# : : : : : : : : : : : : : : " &#'"2#' ; &3 < : : ) : : 8 : : 8 1= > "# ?&' $9 #2 "# : : : : : : ; : : : : : : : : : : 3 : : : : : : : : : : : : @ : : : : : : : : : : : : : : : : 3 3 ' $0& < @ : ($.(& 0$#& 8 8 ) & ; ; > c c c c d d BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 13 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge esr equivalent series resistance imd intermodulation distortion is-95 interim standard 95 ldmos laterally diffused metal oxide semiconductor par peak-to-average ratio smd surface mounted device vbw video bandwidth vswr voltage standing wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes BLF8G22LS-200V_8g22ls-200gv v.2 20121210 pr oduct data sheet - BLF8G22LS-200V_ 8g22ls-200gv v.1 modifications: ? section 1.1 on page 1 : improved video bandwidth has been mentioned. ? table 1 on page 1 : several values have been changed. ? section 1.2 on page 1 : section has been updated. ? table 4 on page 2 : row containing i d has been removed. ? table 5 on page 3 : some values have been added. ? table 6 on page 3 : the minimum value for i dsx has been removed. ? table 7 on page 3 : table has been updated and moved to section 6 on page 3 . ? table 7 on page 3 : several values have been changed. ? section 7 on page 3 : several new sections have been added. BLF8G22LS-200V_8g22ls-200gv v.1 20120613 objective data sheet - - BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 14 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. BLF8G22LS-200V_8g22ls-200gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all right s reserved. product data sheet rev. 2 ? 10 december 2012 15 of 16 nxp semiconductors blf8g22ls-200(g)v power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com nxp semiconductors blf8g22ls-200(g)v power ldmos transistor ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 10 december 2012 document identifier: BLF8G22LS-200V_8g22ls-200gv please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.4.1 pulsed cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.4.2 is-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.4.3 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 8 7.4.4 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 9 7.4.5 2-tone vbw . . . . . . . . . . . . . . . . . . . . . . . . . . 10 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 handling information. . . . . . . . . . . . . . . . . . . . 13 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13 contact information. . . . . . . . . . . . . . . . . . . . . 15 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 |
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